고집적 소자용 구리기둥범프 패키징에서 산화문제를 해결하기 위한 방법에 대한 연구

저자

소*화, 황재룡

게재저널

한국전기전자재료학회 논문지 (http://www.kieeme.or.kr/home/kor/)

키워드

Tin layer, Oxidation barrier, Copper pillar bump, Intercornection

개요

Copper pillar tin bump (CPTB) was developed for high density chip interconnect technology. Copper pillar tin bumps that have 100μm pitch were introduced with fabrication process using a KM-1250 dry film photoresist (DFR), copper electroplating method and Sn electro-less plating method. Mechanical shear strength measurements were introduced to characterize the bonding process as a function of thermo-compression. Shear strength has maximum value with 330℃ and 500 N thermo-compression process. Through the simulation work, it was proved that when the copper pillar tin bump decreased in its size, it was largely affected by the copper oxidation.

첨부파일

• 소대화, 황재룡.pdf [3,879,358 byte]

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