고집적 소자용 구리기둥범프 패키징에서 산화문제를 해결하기 위한 방법에 대한 연구
- 저자
- 소*화, 황재룡
- 게재저널
- 한국전기전자재료학회 논문지 (http://www.kieeme.or.kr/home/kor/)
- 키워드
- Tin layer, Oxidation barrier, Copper pillar bump, Intercornection
- 개요
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Copper pillar tin bump (CPTB) was developed for high density chip interconnect technology. Copper pillar tin bumps that have 100μm pitch were introduced with fabrication process using a KM-1250 dry film photoresist (DFR), copper electroplating method and Sn electro-less plating method. Mechanical shear strength measurements were introduced to characterize the bonding process as a function of thermo-compression. Shear strength has maximum value with 330℃ and 500 N thermo-compression process. Through the simulation work, it was proved that when the copper pillar tin bump decreased in its size, it was largely affected by the copper oxidation.
- 첨부파일
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